Microelectronics Reliability SCIE

國際簡稱：MICROELECTRON RELIAB 參考譯名：微電子可靠性

主要研究方向：工程技術(shù)-工程：電子與電氣非預警期刊審稿周期：較快,2-4周約8.3周

《微電子可靠性》(Microelectronics Reliability)是一本由Elsevier Ltd出版的以工程技術(shù)-工程：電子與電氣為研究特色的國際期刊，發(fā)表該領(lǐng)域相關(guān)的原創(chuàng)研究文章、評論文章和綜述文章，及時報道該領(lǐng)域相關(guān)理論、實踐和應用學科的最新發(fā)現(xiàn)，旨在促進該學科領(lǐng)域科學信息的快速交流。該期刊是一本未開放期刊，近三年沒有被列入預警名單。

4區(qū) 中科院分區(qū)
Q3 JCR分區(qū)
310 年發(fā)文量
1.6 IF影響因子
未開放 是否OA
80 H-index
1964 創(chuàng)刊年份
Monthly 出版周期
English 出版語言

Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.

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Microelectronics Reliability期刊信息

ISSN：0026-2714
出版語言：English
是否OA：未開放
E-ISSN：1872-941X
出版地區(qū)：ENGLAND
是否預警：否
出版商：Elsevier Ltd
出版周期：Monthly
創(chuàng)刊時間：1964
開源占比：0.0623
Gold OA文章占比：14.36%
OA被引用占比：0.0216...
出版國人文章占比：0
出版撤稿占比：0.0058...
研究類文章占比：98.39%

Microelectronics Reliability CiteScore評價數(shù)據(jù)（2024年最新版）

CiteScore

SJR

SNIP

CiteScore 指數(shù)

3.3

0.394

0.801

學科類別	分區(qū)	排名	百分位
大類：Engineering 小類：Safety, Risk, Reliability and Quality	Q2	83 / 207	60%
大類：Engineering 小類：Electrical and Electronic Engineering	Q2	395 / 797	50%
大類：Engineering 小類：Atomic and Molecular Physics, and Optics	Q3	118 / 224	47%
大類：Engineering 小類：Condensed Matter Physics	Q3	230 / 434	47%
大類：Engineering 小類：Surfaces, Coatings and Films	Q3	74 / 132	44%
大類：Engineering 小類：Electronic, Optical and Magnetic Materials	Q3	161 / 284	43%

名詞解釋：CiteScore 是衡量期刊所發(fā)表文獻的平均受引用次數(shù)，是在 Scopus 中衡量期刊影響力的另一個指標。當年CiteScore 的計算依據(jù)是期刊最近4年（含計算年度）的被引次數(shù)除以該期刊近四年發(fā)表的文獻數(shù)。例如，2022年的 CiteScore 計算方法為：2022年的 CiteScore =2019-2022年收到的對2019-2022年發(fā)表的文件的引用數(shù)量÷2019-2022年發(fā)布的文獻數(shù)量注：文獻類型包括：文章、評論、會議論文、書籍章節(jié)和數(shù)據(jù)論文。

Microelectronics Reliability中科院評價數(shù)據(jù)

中科院 2023年12月升級版

Top期刊	綜述期刊	大類學科		小類學科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

中科院 2022年12月升級版

Top期刊	綜述期刊	大類學科		小類學科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

中科院 2021年12月舊的升級版

Top期刊	綜述期刊	大類學科		小類學科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

中科院 2021年12月基礎(chǔ)版

Top期刊	綜述期刊	大類學科		小類學科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

中科院 2021年12月升級版

Top期刊	綜述期刊	大類學科		小類學科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

中科院 2020年12月舊的升級版

Top期刊	綜述期刊	大類學科		小類學科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

Microelectronics Reliability JCR評價數(shù)據(jù)（2023-2024年最新版）

按JIF指標學科分區(qū)	收錄子集	分區(qū)	排名	百分位
學科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	239 / 352	32.2%
學科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	113 / 140	19.6%
學科：PHYSICS, APPLIED	SCIE	Q3	131 / 179	27.1%

按JCI指標學科分區(qū)	收錄子集	分區(qū)	排名	百分位
學科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q4	272 / 354	23.31%
學科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	114 / 140	18.93%
學科：PHYSICS, APPLIED	SCIE	Q4	140 / 179	22.07%

Microelectronics Reliability歷年數(shù)據(jù)統(tǒng)計

影響因子

中科院分區(qū)

Microelectronics Reliability中國學者發(fā)文選摘

1、Effect of Sb content on the phase structure and interface structure of Sn1.0Ag0.5Cu lead-free solder
Author: Xu, Fengxian; Zhu, Wenjia; Yan, Jikang; Zhao, Lingyan; Lv, Jinmei

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 140, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114883
2、Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation
Author: Xiang, Meiju; Wang, Duowei; He, Mu; Rui, Guo; Ma, Yao; Zhu, Xuhao; Mei, Fan; Gong, Min; Li, Yun; Huang, Mingmin; Yang, Zhimei

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114886
3、Small sample classification based on data enhancement and its application in flip chip defection
Author: Sha, Yuhua; He, Zhenzhi; Gutierrez, Hector; Du, Jiawei; Yang, Weiwei; Lu, Xiangning

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114887
4、BP neural network for non-invasive IGBT junction temperature online detection
Author: Liu, Li; Peng, Qianlei; Jiang, Huaping; Ran, Li; Wang, Yang; Du, Changhong; Chen, Jian; Zhou, Hongbo; Chen, Yang; Peng, Zhiyuan

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114882
5、Thermal stress and drop stress analysis based on 3D package reliability study
Author: Xue, Leyang; Li, Xiang; Zhang, Hao

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114888
6、Study on the interface mechanism of copper migration failure in solder mask-substrate package
Author: Li, Yesu; Lin, Shengru; Chi, Panwang; Zou, Yuqiang; Yao, Weikai; Li, Ming; Gao, Liming

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114891
7、Effect of temperature cycling on the leakage mechanism of TSV liner
Author: Chen, Si; Jian, Xiaodong; Li, Kai; Li, Guoyuan; Wang, Zhizhe; Yang, Xiaofeng; Fu, Zhiwei; Wang, Hongyue

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114889
8、Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501
Author: Li, Ning; Li, Yang; Guo, Yaxin; He, Chaohui

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114892