同大類學(xué)科其它級(jí)別期刊:
中科院 1區(qū) 期刊 JCR Q1 期刊 中科院 2區(qū) 期刊 JCR Q2 期刊 中科院 3區(qū) 期刊 JCR Q3 期刊 中科院 4區(qū) 期刊 JCR Q4 期刊國際簡稱:MICROELECTRON J 參考譯名:微電子雜志
主要研究方向:工程技術(shù)-工程:電子與電氣 非預(yù)警期刊 審稿周期: 約3.0個(gè)月
《微電子雜志》(Microelectronics Journal)是一本由Elsevier出版的以工程技術(shù)-工程:電子與電氣為研究特色的國際期刊,發(fā)表該領(lǐng)域相關(guān)的原創(chuàng)研究文章、評論文章和綜述文章,及時(shí)報(bào)道該領(lǐng)域相關(guān)理論、實(shí)踐和應(yīng)用學(xué)科的最新發(fā)現(xiàn),旨在促進(jìn)該學(xué)科領(lǐng)域科學(xué)信息的快速交流。該期刊是一本未開放期刊,近三年沒有被列入預(yù)警名單。
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
CiteScore | SJR | SNIP | CiteScore 指數(shù) | ||||||||||||||||||||||||
4 | 0.39 | 0.854 |
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名詞解釋:CiteScore 是衡量期刊所發(fā)表文獻(xiàn)的平均受引用次數(shù),是在 Scopus 中衡量期刊影響力的另一個(gè)指標(biāo)。當(dāng)年CiteScore 的計(jì)算依據(jù)是期刊最近4年(含計(jì)算年度)的被引次數(shù)除以該期刊近四年發(fā)表的文獻(xiàn)數(shù)。例如,2022年的 CiteScore 計(jì)算方法為:2022年的 CiteScore =2019-2022年收到的對2019-2022年發(fā)表的文件的引用數(shù)量÷2019-2022年發(fā)布的文獻(xiàn)數(shù)量 注:文獻(xiàn)類型包括:文章、評論、會(huì)議論文、書籍章節(jié)和數(shù)據(jù)論文。
Top期刊 | 綜述期刊 | 大類學(xué)科 | 小類學(xué)科 | ||
否 | 否 | 工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 | 3區(qū) 4區(qū) |
Top期刊 | 綜述期刊 | 大類學(xué)科 | 小類學(xué)科 | ||
否 | 否 | 工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 | 3區(qū) 4區(qū) |
Top期刊 | 綜述期刊 | 大類學(xué)科 | 小類學(xué)科 | ||
否 | 否 | 工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 | 4區(qū) 4區(qū) |
Top期刊 | 綜述期刊 | 大類學(xué)科 | 小類學(xué)科 | ||
否 | 否 | 工程技術(shù) | 4區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 | 4區(qū) 4區(qū) |
Top期刊 | 綜述期刊 | 大類學(xué)科 | 小類學(xué)科 | ||
否 | 否 | 工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 | 4區(qū) 4區(qū) |
Top期刊 | 綜述期刊 | 大類學(xué)科 | 小類學(xué)科 | ||
否 | 否 | 工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 | 4區(qū) 4區(qū) |
按JIF指標(biāo)學(xué)科分區(qū) | 收錄子集 | 分區(qū) | 排名 | 百分位 |
學(xué)科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q3 | 211 / 352 |
40.2% |
學(xué)科:NANOSCIENCE & NANOTECHNOLOGY | SCIE | Q4 | 110 / 140 |
21.8% |
按JCI指標(biāo)學(xué)科分區(qū) | 收錄子集 | 分區(qū) | 排名 | 百分位 |
學(xué)科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q3 | 238 / 354 |
32.91% |
學(xué)科:NANOSCIENCE & NANOTECHNOLOGY | SCIE | Q3 | 94 / 140 |
33.21% |
Author: Zhu, Guangqian; Qian, Libo; Li, Yongyuan; Guo, Wei; Ding, Ruixue; Yang, Yintang
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 136, Issue , pp. -. DOI: 10.1016/j.mejo.2023.105782
Author: Gao, Ying; Liu, Xin; Jiang, Yanfeng
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105671
Author: Hu, Yanghui; Zhang, Yuming; Lu, Hongliang; Tan, Daidao; Qi, Junjun
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105670
Author: Zhao, Tianhu; Liang, Yuhua; Feng, Lichen
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105652
Author: Yang, Ke; Liang, Yuan; Zhang, Hao Chi; Feng, Guangyin
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105664
Author: Jin, Wei; Pun, Kong-Pang
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105666
Author: Cheng, Guoxiao; Zhang, Jin-Dong; Chen, Qiaoyu; Sima, Boyu; Wu, Wen
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105672
Author: Duan, Quanzhen; Duan, Ying; Kong, Dameng; Li, Liwei; Huang, Shengming
Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105663
Applied Thermal Engineering
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Ieee Transactions On Industrial Electronics
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International Journal Of Thermal Sciences
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